High-k Gate Dielectrics for CMOS Technology

  • 12h 9m
  • Gang He, Zhaoqi Sun
  • John Wiley & Sons (US)
  • 2012

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies.

Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

About the Authors

Gang He is Professor at the School of Physics and Materials Science of the Anhui University, China. He obtained his academic degrees from the Institute of Solid State Physics of the Chinese Academy of Sciences. His research interests and efforts cover the areas of the preparation, characterization, fundamental understanding and associated applications of high-k gate dielectric thin films. Due to his outstanding performance in research work, he won a scholarship award from the Chinese Academy of Sciences in 2005 and a grant of the Japanese Society for the Promotion of Science in 2006.

Zhaoqi Sun is the President of the School of Physics and Materials Science at the Anhui University. He graduated from Sichuan University and obtained his academic degrees from the University of Science and Technology of China. His research is focused on functional thin film materials for applications in microelectronics. Zhaoqi Sun has authored more than 140 scientific publications and has received numerous scientific awards, including the Science and Technology Award of the Anhui Province and an Outstanding Teacher Award.

In this Book

  • Color Plates
  • Scaling and Limitation of Si-based CMOS
  • Issues in High-k Gate Dielectrics and its Stack Interfaces
  • UV Engineering of High-k Thin Films
  • Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate
  • Structural and Electrical Characteristics of Alternative High-κ Dielectrics for CMOS Applications
  • Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3) for High-k Gate Insulators
  • Characterization of High-k Dielectric Internal Structure by X-Ray Spectroscopy and Reflectometry—New Approaches to Interlayer Identification and Analysis
  • High-k Insulating Films on Semiconductors and Metals—General Trends in Electron Band Alignment
  • Interface Engineering in the High-k Dielectric Gate Stacks
  • Interfacial Dipole Effects on High-k Gate Stacks
  • Metal Gate Electrode for Advanced CMOS Application
  • Metal Gate/High-κ CMOS Evolution from Si to Ge Platform
  • Theoretical Progress on GaAs (001) Surface and GaAs/high-κ Interface
  • III–V MOSFETs with ALD High-κ Gate Dielectrics
  • High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications
  • Rare-Earth Oxides as High-k Gate Dielectrics for Advanced Device Architectures
  • The Interaction Challenges with Novel Materials in Developing High-Performance and Low-Leakage High-κ/Metal Gate CMOS Transistors